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TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 Devices 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Sto.
IC = 10 mAdc Collector-Emitter Cutoff Voltage VCE = 40 Vdc VCE = 60 Vdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 3.5 Vdc VEB = 5.0 Vdc 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2N2905A, L All Types V(BR)CEO ICES 40 60 1.0 1.0 Vdc µAdc ICBO 20 10 10 50 10 ηAdc µAdc ηAdc µAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (co.
2N2904AL - VPT
2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qual.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2904A |
Seme LAB |
Bipolar PNP Device |
|
| 2 | 2N2904A |
Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR |
|
| 3 | 2N2904A |
VPT |
Radiation Hardened PNP Transistors |
|
| 4 | 2N2904A |
TAITRON |
Small Signal General Purpose Transistor |
|
| 5 | 2N2904A |
Motorola |
PNP Silicon Annular Hermetic Transistors |
|
| 6 | 2N2904A |
Central Semiconductor |
PNP SILICON TRANSISTORS |
|
| 7 | 2N2904 |
Seme LAB |
GENERAL PURPOSE PNP TRANSISTOR |
|
| 8 | 2N2904 |
Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR |
|
| 9 | 2N2904 |
NTE |
Silicon PNP Transistor |
|
| 10 | 2N2904 |
Central Semiconductor |
PNP SILICON TRANSISTORS |
|
| 11 | 2N2904 |
Motorola |
PNP Silicon Annular Hermetic Transistors |
|
| 12 | 2N2904 |
VPT |
Radiation Hardened PNP Transistors |
|