p-cha.,.nel JFETs designed for • • • • Small-Siglllal Amplifiers H Performance Curves PC PD See Section 4 BENEFITS • Low Supply Voltage Operation V GS(off) Typically 1.2 V *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain and Gate-Source Voltage (Note 3) ........ 30V Gate Current, Forwal"d Biased (Note 1) ........... 50mA Total Device Dissipation (Derate 2mW/oC).
1.7 V VOS ~ -5 V, 10 ~ -1 pA
-440 -2200 /lA VDS~-5V, VGS~O
1400
Jimho VOS~-5V,VGS~0
30 pF 3 dB
VDS~-5V, VGS~ 1 V VOS ~ -5 V. VGS - 0, RG ~ 1M Q
PC
PO
*JEDEC Registered Data
NOTES: 1. Not JEOEC Registered 2. IGSS is JEDEC Registered at VGS =;0 5 V. 3. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.
1 ~ 1 kHz
I~ 140kHz 1 ~ 1 kHz
© 1977 SHiconix incorporated 3-2
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N2844 |
Siliconix |
Small-Signal Amplifiers | |
2 | 2N2845 |
Motorola |
NPN Transistor | |
3 | 2N2845 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N2846 |
Motorola |
NPN Transistor | |
5 | 2N2847 |
Motorola |
NPN Transistor | |
6 | 2N2848 |
Motorola |
NPN Transistor | |
7 | 2N2800 |
Motorola |
PNP Transistor | |
8 | 2N2800 |
Central Semiconductor |
Small Signal Transistors | |
9 | 2N2801 |
Motorola |
PNP Transistor | |
10 | 2N2801 |
Central Semiconductor |
Small Signal Transistors | |
11 | 2N2811 |
Microsemi |
NPN Transistor | |
12 | 2N2812 |
SSDI |
NPN Transistor |