2N2480,A For Specifications, See 2N2060 Data. 2N2481 (SILICON) 2N2481 JAN,JTXAVAILABLE "CASE 22 (TO-IS) Collector connected to case NPN silicon annular transistor for high- speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation @ 25°C Ambient Temperature (Derate.
0) Collector Leakage Current (VCE = 20 Vdc, VBE = 3 Vdc) (VCE = 20 Vdc, VBE = 3Vdc,TA; lS00C) Base Leakage Curren~ (VCE = 20 Vdc, VBE = 3 Vdc) Emitter Cutoff Current (VEB = 4.0 Vdc, 1c = 0) DC Forward Current Transfer Ratio (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc)(IC = 10 mAdc, VCE = 1.0 Vdc, T A = -550C) III (IC = 150 mAdc, VCE ; 1.0 Vdc) 111 Collector-Emitter Saturation Voltage (Ie = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) III Base-Emitter Saturation Voltage (IC = 10 mAdc, IB ; 1.0 mAdc) (IC = 100 mAde, IB ; 10 mAde) 111 Output Capacitance (VCB = 5 V, Ie = 0.
VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N2480 |
Motorola |
DUAL AMPLIFIER TRANSISTOR | |
2 | 2N2480 |
Central Semiconductor |
DUAL NPN TRANSISTORS | |
3 | 2N2480A |
Motorola |
DUAL AMPLIFIER TRANSISTOR | |
4 | 2N2480A |
Central Semiconductor |
DUAL NPN TRANSISTORS | |
5 | 2N2483 |
SGS-ATES |
NPN Transistor | |
6 | 2N2483 |
Semicoa |
NPN Transistor | |
7 | 2N2484 |
Seme LAB |
NPN SILICON AMPLIFIER TRANSISTOR | |
8 | 2N2484 |
Central Semiconductor |
NPN SILICON TRANSISTOR | |
9 | 2N2484 |
SGS-ATES |
NPN Transistor | |
10 | 2N2484 |
Philips |
NPN general purpose transistor | |
11 | 2N2484 |
Microsemi |
NPN SILICON LOW POWER TRANSISTOR | |
12 | 2N2484 |
Comset Semiconductor |
SILICON PLANAR EPITAXIAL TRANSISTORS |