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2N2405 - Motorola

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2N2405 NPN silicon annular transistors

1893 2N (SILICON) 2N240S NPN silicon annular transistors designed for mediumpower amplifier and switching applications. CASE 31 (TO-5) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25"C Derate above 25"C .

Features

ltage' (IC = 30 mAde, IB = 0) (IC = 100 mAdc, IB = 0) 2N1893 2N2405 , BVCEO(sus) Collector-Emitter Sustaining Voltage (IC = 100 mAde, RBE = 10 ohms) Collector-Base Breakdown Voltage (IC = 100 !LAdc, IE = 0) 2N1893 2N2405 BVCER(sus) BVCBO Emitter-Base Breakdown Voltage (IE = 100 !LAde, IC = 0) BVEBO Collector Cutoff Current (VCB = 90 Vde, IE ~ 0) (VCB = 90 Vdc, IE = 0, TA = 150"C) Emitter Cutoff Current (VBE = 5.0 Vde, IC = 0) 2N1893 2N2405 ICBO lEBO Min 80 90 100 140 120 7.0 - - - Max - -- - - 0.01 15 10 0.01 Unit Vde Vdc Vdc Vdc !LAde !LAdc 2-224 2N1893, 2N240S (continued) ELE.

The same part from a different manufacturer

Datasheet 2N2405 - NTE 2N2405

The 2N2405 is a silicon NPN transistor in a TO−39 type package designed for use in high current, fast switching applica.

Datasheet 2N2405 - Semelab 2N2405

2N2405 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR w.

Datasheet 2N2405 - Central Semiconductor 2N2405

The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose.

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