2N2100 - Motorola

2N2100 PNP Transistor

A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current switching in line and core driver applications. CA5E~(TO.5~1 ~ CASE 25 2N1204.A 2N1495 2N2099 2N2100 MAXIMUM RATINGS Collector connected to case 2N1494.A 2N1496 2N2096 2N2097 Rating Collector-Base Voltage 2N12.

Features

rating Junction and Storage Temperature Range VEB IC PD PD TJ Tstg 4.0 Vdc 500 mAdc 750 mW 10 mW/oC 300 mW 4.0 mWjOC 500 mW 6.67 mW/oC -65 to +100 °C 2-180 2N 1204,A SERIES (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristics Collector-Base Breakdown Voltage = (IC 100 "Ade, IE =0) Collector-Emitter Breakdown Voltage (Ie = 100/.lAde, VBE '" 0) 2N1204, 2N1204A, 2N1494, 2N1494A 2N2096, 2N2099 2N1495, 2N1496, 2N2097, 2N210Q 2N1204. 2N1204A, 2N1494, 2N1494A 2N2096, 2N2099 2N1495, 2N1496, 2N2097, 2N2100 Collector-Emitter Breakdown Volta.