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The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products approved to CECC 50002-104 available on request. TO-39 INTERNAL SCHEMATIC.
ERISTICS (T amb = 25 °C unless otherwise specified)
Symbol I CBO I E BO V ( BR)
CBO
Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0)
Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V T am b = 150 °C for 2N 16 13 for 2N 17 11
Min.
Typ.
Max. 10 10 10 5
Unit nA µA nA nA V
Collector-base Breakdown I C = 0.1 mA Voltage Collector-emitter Breakdown Voltage (R B E ≤ 10 Ω) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 10 mA
75
V (BR)CE R
*
50
V
V ( BR) V CE V BE
EBO
I E = 0..
2N1711 - Philips
NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N1711 PINNING PIN 1 2 3 emitter base coll.
2N1711 - Comset Semiconductor
NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 met.
2N1711 - Microsemi
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Leve.
2N1711 - Motorola
2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total.
2N1711 - CDIL
Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Abo.
2N1711 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose.
2N1711 - Seme LAB
2N1711 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.
2N1711 - TT
SILICON PLANAR NPN BIPOLAR TRANSISTOR 2N1711 Hermetic TO39 (TO205AD) Package Ideal for amplifier, oscillator and switchi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1716 |
Microsemi |
NPN Transistor |
|
| 2 | 2N1717 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N1702 |
SSDI |
NPN Transistor |
|
| 4 | 2N1702 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 5 | 2N1705 |
Motorola |
PNP Transistor |
|
| 6 | 2N1706 |
Motorola |
PNP Transistor |
|
| 7 | 2N1707 |
Motorola |
PNP Transistor |
|
| 8 | 2N1708 |
Motorola |
NPN silicon transistor |
|
| 9 | 2N1722 |
Microsemi |
NPN SILICON HIGH POWER TRANSISTOR |
|
| 10 | 2N1722 |
New Jersey Semi-Conductor |
Triple Diffused Power Transistors |
|
| 11 | 2N1722A |
New Jersey Semi-Conductor |
Triple Diffused Power Transistors |
|
| 12 | 2N1723 |
New Jersey Semi-Conductor |
Triple Diffused Power Transistors |
|