2N1470 - Inchange Semiconductor

2N1470 Silicon NPN Power Transistor

·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS ·Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Em.

Features

1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 5V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; IB= 0 VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; TC= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V IC= 3A; VCE= 5V MIN MAX UNIT 60 V 60 V 1.0 V 1.5 V 1.5 V 0.1 mA 0.1 2.0 mA 1.0 mA 15 5 isc website：www.iscsemi.cn 2 .