SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI75U4A-120 Spec. No. : MS5F 6060 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada Y.Seki MS5F6060 1 13 H04-004-07b Revised Records Date Classification Ind. Mar.-09 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.Miyasaka K.Yamada Y.Seki MS5F606.
ne.
(
*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tc=25oC Tc=80oC Tc=25oC Tc=80oC
Max i m u m
Ratings 1200 ±20 100 75 200 150 75 150 400 +150
-40 to +125
Units V V
A
W oC
2500
VAC
3.5 N m
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Zero gate voltage collector current
ICES
VCE=1200V VGE=0V
- - 1.0
Gate-Emitter leakage current
IGES
VCE=0V VGE=±20V
- - 200
Gate-Emitter threshold voltage
VGE(th)
VCE=20V Ic=75mA
4.5 6.5 8.5
VCE(sat) Ic=75A
Tj=25oC
-
2.05 2.20
Collector-Emitter
(t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2MBI75UA-120 |
Fuji Electric |
IGBT | |
2 | 2MBI75F-060 |
Fuji |
IGBT(600V 75A) | |
3 | 2MBI75F-120 |
Fuji |
IGBT(1200V 75A) | |
4 | 2MBI75L-060 |
Fuji |
IGBT(600V 75A) | |
5 | 2MBI75L-120 |
Fuji |
IGBT(1200V 75A) | |
6 | 2MBI75N-060 |
Fuji |
IGBT(600V 75A) | |
7 | 2MBI75N-120 |
Fuji |
IGBT(1200V 75A) | |
8 | 2MBI75P-140 |
Fuji |
IGBT Module | |
9 | 2MBI75VA-120-50 |
Fuji Electric |
IGBT | |
10 | 2MBI75VA-170-50 |
Fuji Electric |
IGBT | |
11 | 2MBI1000VXB-170E-50 |
Fuji Electric |
IGBT | |
12 | 2MBI1000VXB-170E-54 |
Fuji Electric |
IGBT |