2MBI200U4H-170 - Fuji Electric

2MBI200U4H-170 IGBT

SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI200U4H-170 Spec. No. : MS5F 6136 May. 27 ’05 May. 27 ’05 S.Miyashita T.Miyasaka K.Yamada Y.Seki MS5F6136 1 13 H04-004-07b Revised Records Date Classification Ind. May.-27 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.Miyasaka K.Yamada Y.Seki MS5F6.

Features

ogether when isolation test will be done. (
*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (
*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6) Max i m u m Ratings 1700 ±20 300 200 600 400 200 400 1040 150 -40 ~ +125 Units V V A W °C 3400 VAC 3.5 4.5 Nm 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage Collector current ICES VGE = 0V VCE = 1700V Gate-Emitter leakage current IGES VCE = 0V VGE=±20V Gate-Emitter threshold voltage VGE(th) VCE = 20V Ic = 200mA Collector-Emitter saturation voltage VCE(sa.