2CZ30100 BN , 。 、 、。 N 2CZ30100 BN ○R ●150℃ ● ● ● ● VRRM IF(AV) VF(MAX) 100 2×15 0.85 V A V TO-3P(N) -10℃~40℃ 1 <85% 265℃ (Per Diode) (,Ta= 25℃) (8.3ms,sinusoidal) (2μs,1kHz) VRRM VR IF(AV) IFSM IRRM Tj Tstg dv/dt 100.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2CZ30100B8 |
Huajing Microelectronics |
Silicon Schottky rectifier diode | |
2 | 2CZ30S45A8 |
Huajing Microelectronics |
Silicon Schottky rectifier diode | |
3 | 2CZ32B |
WEJ |
Silicon And Fast Recovery Rectifiers | |
4 | 2CZ32C |
WEJ |
Silicon And Fast Recovery Rectifiers | |
5 | 2CZ32D |
WEJ |
Silicon And Fast Recovery Rectifiers | |
6 | 2CZ32E |
WEJ |
Silicon And Fast Recovery Rectifiers | |
7 | 2CZ32F |
WEJ |
Silicon And Fast Recovery Rectifiers | |
8 | 2CZ32G |
WEJ |
Silicon And Fast Recovery Rectifiers | |
9 | 2CZ32H |
WEJ |
Silicon And Fast Recovery Rectifiers | |
10 | 2CZ32J |
WEJ |
Silicon And Fast Recovery Rectifiers | |
11 | 2CZ33B |
WEJ |
Silicon And Fast Recovery Rectifiers | |
12 | 2CZ33C |
WEJ |
Silicon And Fast Recovery Rectifiers |