29F512 - Eon Silicon Solution

29F512 EN29F512

The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminat.

Features

• 5.0V operation for read/write/erase operations
• Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
• Sector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 7µs typical Sector erase time: 300ms typical Chip erase time: 1.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector .