. . . . . . . . 9 Architecture . . . . . 13 Addressing.
NAND Flash Memory
MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
– Page size:
• x8: 2,112 bytes (2,048 + 64 bytes)
• x16: 1,056 words (1,024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 2Gb: 2,048 blocks
• READ performance
– Random READ: 25µs
– Sequential READ: 25ns (3.3V)
– Sequential READ: 35ns (1.8V)
• WRITE performance
– PROGRAM PAGE: 220µs (TYP, 3.3V)
– PROGRAM PAGE: 300µs (TYP, 1.8V)
– BLOCK ERASE: 500µs (TYP)
• Data retention: 10 years
• Endurance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 29F2G08 |
Micron |
NAND Flash Memory | |
2 | 29F2G08AABWP |
Micron Technology |
MT29F2G08AABWP | |
3 | 29F200 |
STMicroelectronics |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory | |
4 | 29F200BB |
STMicroelectronics |
M29F200BB | |
5 | 29F001TPC |
Macronix International |
MX29F001TPC | |
6 | 29F002 |
STMicroelectronics |
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory | |
7 | 29F002 |
Advanced Micro Devices |
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory | |
8 | 29F002 |
Fujitsu Media Devices Limited |
2M (256K X 8) BIT | |
9 | 29F002 |
Macronix International |
2M-BIT [256K x 8] CMOS FLASH MEMORY | |
10 | 29F010 |
Advanced Micro Devices |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory | |
11 | 29F010 |
STMicroelectronics |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory | |
12 | 29F020 |
Advanced Micro Devices |
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |