2729-170 - Advanced Power Technology

2729-170 Radar

The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specific.

Features

@ 25° C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 170 W MIN 170 25.7 8.2 52 8.6 60 2:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25° C BVebo Iebo BVces Ices h FE θjc 1 Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC
  – Current Gain Thermal Resistance 1. At rated output power and pulse conditions Ie = 30 mA Veb = 1.5 V Ic = 120 mA Vc.