2622GY - VBsemi

2622GY Dual N-Channel MOSFET

2622GY-VB 2622GY-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 1.8 at VGS = 10 V ID (mA) 350 G1 3 mm S2 G2 D1 TSOP-6 Top View 1 6 D1 2 5 S1 3 4 D2 2.85 mm D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resi.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• Low On-Resistance: 1.8 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays ABSOLUTE MAXIMUM RA.