The M25P40 is a 4 Mbit (512K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be vi.
SUMMARY s 4 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (512 Kbit) in 2 s (typical) (4 Mbit) in 5 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Interface 25 MHz Clock Rate (maximum) Deep Power-down Mode 1 µA (typical) Electronic Signature (12h) More than 100,000 Erase/Program Cycles per Sector More than 20 Year Data Retention s s Bulk Erase www.DataSheet4U.com s s s s s s 8 1 SO8 (MN) 150 mil width s VFQFPN8 (MP) (MLP8) June 2003 1/35 M25P40 SUMMARY DESCRIPTION The M25P40 is a 4 Mbit (512K x 8) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25P40VP |
Micron |
3V 4Mb Serial Flash Embedded Memory | |
2 | 25P40VP |
STMicroelectronics |
Serial Flash Memory | |
3 | 25P05 |
STMicroelectronics |
M25P05 | |
4 | 25P10 |
STMicroelectronics |
1 Mbit Low Voltage Paged Flash Memory | |
5 | 25P10A |
Micron |
1Mb 3V Serial Flash Embedded Memory | |
6 | 25P10AV |
ST Microelectronics |
M25P10AV | |
7 | 25P10VP |
STMicroelectronics |
M25P10 | |
8 | 25P16 |
Winbond |
W25P16 | |
9 | 25P20VP |
STMicroelectronics |
Serial Flash Memory | |
10 | 25P32 |
Eon Silicon Solution |
EN25P32 | |
11 | 25P64 |
Eon Silicon Solution |
EN25P64 | |
12 | 25P80 |
Winbond |
W25P80 |