and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A
P-TO247
Type SPW24N60C3
Package P-TO247
Ordering Code Q67040-S4640
Marking 24N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 24N60M2 |
STMicroelectronics |
N-Channel MOSFET | |
2 | 24N65-CB |
UTC |
N-CHANNEL MOSFET | |
3 | 24N06 |
ON Semiconductor |
NTD24N06 | |
4 | 24N40-HC |
UTC |
400V N-CHANNEL POWER MOSFET | |
5 | 24N40E |
Motorola |
MTW24N40E | |
6 | 24N50 |
Inchange Semiconductor |
N-Channel MOSFET | |
7 | 24N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 24N50-HCQ |
UTC |
N-CHANNEL POWER MOSFET | |
9 | 24NM50 |
UTC |
N-CHANNEL MOSFET | |
10 | 24NM60 |
UTC |
N-Channel MOSFET | |
11 | 24NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
12 | 24NM65 |
UTC |
N-CHANNEL MOSFET |