2310DHI - STMicroelectronics

2310DHI ST2310DHI

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE.

Features

Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 www.DataSheet4U.com ST2310DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB =.