20N50C1 - Intersil Corporation

20N50C1 HGTH20N50C1

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circui.

Features

• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode Applications
• Power Supplies
• Motor Drives
• Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. Thes.