20N20 - INCHANGE

20N20 N-Channel MOSFET

isc N-Channel MOSFET Transistor 20N20 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤180mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=.

Features

·Static drain-source on-resistance: RDS(on) ≤180mΩ
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT.