20N15 - Inchange Semiconductor

20N15 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N15 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications in power supplies.

Features

·Drain Current ID= 20A@ TC=25℃
·Drain Source Voltage- : VDSS= 150V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications in power supplies
·Motor controls,high efficient DC to DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 90 .