20J321 - TOSHIBA

20J321 GT20J321

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) Low switching loss • • : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation.

Features

iode) Symbol Rth (j-c) Rth (j-c) Max 2.78 4.23 Unit °C/W °C/W ww.DataSheet4U.com Equivalent Circuit Collector Gate Emitter 1 www.DataSheet4U.com 2002-04-08 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www.DataSheet4U.com GT20J321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time www.DataSheet4U.com Switching time Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff.