20DL2CZ51A - ToshibaSemiconductor

20DL2CZ51A HIGH EFFICIENCY DIODE STACK

20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 20DL2CZ51A, 20FL2CZ51A SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V z Average Output Rectified Current : IO = 20 A z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max) z Low .

Features

y significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage 20DL2CZ51A 20FL2CZ51A Repetitive Peak ReverseCurrent Reverse Recovery Time Forward Recovery Tim.