1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package : P = 1.0W : PRSM = 200W at tw = 200µs : VZ = 6.8~390V : ±10% MAXIMUM RATINGS (Ta = 25°C) CHARAC.
OEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6 1.2 0.2 10 4.9 8.2 9.1 10.1 30 10 5 8 1.2 0.2 10 5.5 9.0 10 11.0 30 10 6 9 1.2 0.2 10 6 9.9 11 12.1 30 10 7 11 1.2 0.2 10 7 10.8 12 13.2 30 10 8 13 1.2 0.2 10 8 11.7 13 14.3 30 10 9 14 1.2 0.2 10 9 13.5 15 16.5 30 10 11 17 1.2 0.2 10 10 14.4 16 17.6 30 10 12 19 1.2 0.2 10 11 16.2 18 19.8 30 10 14 23 1.2 0.2 10 13.
BL FEATURES power rating. GALAXY ELECTRICAL ZENER DIODES 1ZB6.8 --- 1ZB390 POWER DISSIPATION: 1.0 W Silicon planar po.
1ZB6.8-1ZB390 Zener Diodes POWER DISSIPATION: 1.0 W Features Silicon planar power zener diodes For use in stabilizing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1ZB300-X |
Galaxy Semi-Conductor |
ZENER DIODES | |
2 | 1ZB300-X |
Luguang Electronic |
(1ZB6.8 - 1ZB390) Zener Diodes | |
3 | 1ZB300-X |
Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE | |
4 | 1ZB300-Y |
Galaxy Semi-Conductor |
ZENER DIODES | |
5 | 1ZB300-Y |
Luguang Electronic |
(1ZB6.8 - 1ZB390) Zener Diodes | |
6 | 1ZB300-Y |
Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE | |
7 | 1ZB300 |
Galaxy Semi-Conductor |
ZENER DIODES | |
8 | 1ZB300 |
Luguang Electronic |
(1ZB6.8 - 1ZB390) Zener Diodes | |
9 | 1ZB300 |
Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE | |
10 | 1ZB30 |
Galaxy Semi-Conductor |
ZENER DIODES | |
11 | 1ZB30 |
Luguang Electronic |
(1ZB6.8 - 1ZB390) Zener Diodes | |
12 | 1ZB30 |
Toshiba |
SILICON DIFFUSED TYPE ZENER DIODE |