1SS420CT - Toshiba

1SS420CT Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.38 +0.02 -0.03 .

Features

product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test.