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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability R-1 MECHANICAL DATA * * * * * Case: Molded plast.
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* Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability
R-1
MECHANICAL DATA
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* Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.12 gram
.787 (20.0) MIN. .025 (0.65) DIA. .021 (0.55)
.126 (3.2) .106 (2.7)
.102 (2.6) DIA. .091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resi.
1S20 - Yangzhou Yangjie
1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very .
1S20 - Eris
1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A .
1S20 - Formosa MS
1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S60 VOLTAGE RANGE 20 to 100 Volts CURRENT FEATURES * Low forward volt.
1S20 - Micro Commercial Components
MCC Features • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % .
1S20 - KD
1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The.
1S20 - EIC
Certificate TH97/10561QM Certificate TW00/17276EM 1S20 - 1S60 PRV : 20 - 60 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1S2 |
Pan Jit International Inc. |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS |
|
| 2 | 1S200 |
Yangzhou Yangjie |
Schottky Barrier Rectifier |
|
| 3 | 1S2074 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode |
|
| 4 | 1S2074H |
Hitachi Semiconductor |
Silicon Diode |
|
| 5 | 1S2075 |
Hitachi Semiconductor |
Silicon Diode |
|
| 6 | 1S2075K |
Hitachi Semiconductor |
Silicon Diode |
|
| 7 | 1S2076 |
Hitachi Semiconductor |
Silicon Diode |
|
| 8 | 1S2076A |
Hitachi Semiconductor |
Silicon Diode |
|
| 9 | 1S2076A |
Renesas |
Silicon Epitaxial Planar Diode |
|
| 10 | 1S2076A |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 11 | 1S2093 |
Toshiba Semiconductor |
SILICON PLANAR TYPE TRIGGER DIODE |
|
| 12 | 1S2094 |
Toshiba Semiconductor |
VARIABLE CAPACITANCE DIODE |
|