1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830,1S1885,1S1887,1S1888 General Purpose Rectifier Applications Unit: mm · Average Forward Current: IF (AV) = 1.0 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V Maximum Ratings (Ta = 25°C) Characteristics 1S1885 Repetitive peak reverse voltage .
RRM = Rated, Tj = 150°C DC
Min Typ. Max Unit
¾ ¾ 1.2 V ¾ ¾ 10
mA ¾ ¾ 400 ¾ ¾ 100 °C/W
Marking
Type Code Lot No.
88 Month (starting from alphabet A)
Cathode Mark Color: Silver
Year (last number of the christian era)
Code
30 85 87 88
Type
1S1830 1S1885 1S1887 1S1888
1 2001-11-14
Instantaneous forward current iF (A)
20
10
5.0 3.0
150
1.0
0.5 0.3
iF
– vF
Tj = 25°C
0.1 0.4
0.8 1.2 1.6 2.0 2.4 Instantaneous forward voltage vF (V)
2.8
5000 1000
rth (j-a)
– t
100
10
1
0.1 0.001
0.01
0.1 1 10 Time t (s)
100 1000
Maximum allowable ambient temperature Ta max (°C)
Surge forward c.
www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1S1885 |
EIC |
SILICON RECTIFIER DIODES | |
2 | 1S1885 |
Toshiba Semiconductor |
Silicon Rectifier | |
3 | 1S1885A |
Toshiba Semiconductor |
Silicon Rectifier | |
4 | 1S1886 |
EIC |
SILICON RECTIFIER DIODES | |
5 | 1S1886 |
Toshiba Semiconductor |
Silicon Rectifier | |
6 | 1S1886A |
Toshiba Semiconductor |
RECTIFIER | |
7 | 1S1887A |
Toshiba Semiconductor |
Silicon Rectifier | |
8 | 1S1888 |
EIC |
SILICON RECTIFIER DIODES | |
9 | 1S1888 |
Toshiba Semiconductor |
Silicon Rectifier | |
10 | 1S1888A |
Toshiba Semiconductor |
Silicon Rectifier | |
11 | 1S1829 |
Toshiba Semiconductor |
Silicon Rectifier | |
12 | 1S1829 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES |