® MOTOROLA Designers Data Sheet a lN746 thru lN759 lN957A thru lN986A lN4370 thru lN4372 GLASS ZENER DIODES 500 MILLIWATTS 2.4-110 VOLTS MAXIMUM RATINGS Rating De Power Dissipation @ TL .. 50oe, Lead Length =3/S" *JEOEC Registration °Derate above T L = 500 e Motorola Device Ratings Derate above TL =500 e Operating Bnd Storage Junction Temperature Range *.
Value Unit 400 3.2 500 3.33 -65 to +175 -65 to +200 mW mW/oe mW mW/oe °e MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230oe. 1/16" from case for 10 seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads. POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode. MOUNTING POSITION: Any STEADY STATE POWER DERATING ~ 0.7 i 0.6 1 ~ r--MOTOROlA DEVICES ~ 0.5 ~ 0.4 1 ,.OJ 'w~" r-~~~~;TRATION 0.3 ~ 0.2 'x" ~ O. I o o 20 40 I HIEAT I _ ~= '" I.. .. 1'..
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Dnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N960 |
Motorola |
Diode | |
2 | 1N960 |
Micro Commercial Components |
0.5W Silicon Planar Zener Diodes | |
3 | 1N960 |
JGD |
Silicon Planar Zener Diodes | |
4 | 1N960 |
SEMTECH |
SILICON PLANAR ZENER DIODES | |
5 | 1N960 |
CHENYI |
0.5W SILICON PLANAR ZENER DIODES | |
6 | 1N960B |
Vishay Telefunken |
Silicon Z-Diodes | |
7 | 1N960B |
Compensated Deuices Incorporated |
METALLURGICALLY BONDED | |
8 | 1N960B |
Central Semiconductor |
SILICON ZENER DIODE | |
9 | 1N960B |
EIC |
ZENER DIODES | |
10 | 1N960B |
NTE |
Zener Diode | |
11 | 1N960B |
GOOD-ARK |
Zener Diodes | |
12 | 1N960B |
Microsemi |
Silicon 500mW Zener Diodes |