1N8024-GA - GeneSiC

1N8024-GA High Temperature Silicon Carbide Power Schottky Diode

1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF .

Features

 1200 V Schottky rectifier
 250°C maximum operating temperature
 Electrically isolated base-plate
 Zero reverse recovery charge
 Superior surge current capability
 Positive temperature coefficient of VF
 Temperature independent switching behavior
 Lowest figure of merit QC/IF
 Available screened to Mil-PRF-19500 Package
 RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO
  – 257 (Isolated Base-plate Hermetic Package) Advantages
 High temperature operation
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of p.