www.DataSheet4U.com 2,000 V - 5,000 V Rectifiers 0.05 A - 0.25 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED 1N6529U 1N6531U 1N6533U ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) 55°C(1) Volts 1N6529U 1N6531U 1N6533U Amps Average Rectified Current (Io) 100°C(2) Amps 25°C µA Reverse Curr.
(2.54)
B
Part
A
B
.022
Dimension uncontrolled in this area due to solder fillet.
1N6529U 1N6531U 1N6533U
.190(4.83) .110(2.79) MAX. .210(5.34) .130(3.30) MAX. .230(5.84) .150(3.81) MAX.
Dimensions: In. (mm)
• All temperatures are ambient unless otherwise noted.
• Data subject to change without notice.
VOLTAGE MULTIPLIERS INC. 8711 W. Roosevelt Ave. Visalia, CA 93291
TEL 559-651-1402 FAX 559-651-0740 www.voltagemultipliers.com
157
1N6529U 1N6531U 1N6533U
POWER DERATING
4.5 4.0
Maximum Power Dissipation (W) Maxumum
12 10
TYPICAL FORWARD VOLTAGE VS. FORWARD CURRENT AT 25°C
3.5 3.0 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N6531 |
VMI |
High Voltage Diodes | |
2 | 1N6533 |
VMI |
High Voltage Diodes | |
3 | 1N6533U |
VMI |
(1N6529U - 1N6533U) Rectifiers | |
4 | 1N6535 |
VMI |
High Voltage Diodes | |
5 | 1N65 |
BKC |
Gold Bonded Diode | |
6 | 1N65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 1N6510 |
Microsemi |
Isolated Diode Array | |
8 | 1N6510 |
SENSITRON SEMICONDUCTOR |
Isolated Diode Array | |
9 | 1N6511 |
Microsemi |
Isolated Diode Array | |
10 | 1N6512 |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER | |
11 | 1N6512SMS |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER | |
12 | 1N6513 |
HVGT |
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode |