1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward character.
● Metal-on-silicon junction, majority carrier conduction
● High current capability, Low forward voltage drop
● Extremely low reverse current Ir
● Ultra speed switching characteristics
● Small temperature coefficient of forward characteristics
● Satisfactory Wave detection efficiency
● For use in RECORDER TV RADIO TELEPHONE as
detectors, super high speed switching c rcuits, small current rectifier
MECHANICAL DATA
Case: DO-35 glass case Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.13 grams
Φ 1.8 ± 0.2
Φ 0.5 ± 0.1
DO-35
All Dimensions in mm
26 ± 1
3.8 ± 0.2
2.
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low g.
1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltag.
Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forwa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N60-KW |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 1N6000 |
Microsemi |
Axial-Leaded 500 mW Zener Diodes | |
3 | 1N6000 |
MCC |
500mW Zener Diode | |
4 | 1N6000 |
Digitron Semiconductors |
500mW ZENER DIODES | |
5 | 1N6000A |
EIC |
ZENER DIODES | |
6 | 1N6000A |
SYNSEMI |
ZENER DIODES | |
7 | 1N6000A |
Motorola |
ZENER DIODES | |
8 | 1N6000B |
Central Semiconductor |
SILICON ZENER DIODES | |
9 | 1N6000B |
MCC |
500 mW Zener Diode | |
10 | 1N6000B |
Fairchild Semiconductor |
Zener Diodes | |
11 | 1N6000BUR-1 |
Microsemi |
Surface Mount 500mW Zener Diodes | |
12 | 1N6001 |
Microsemi |
Axial-Leaded 500 mW Zener Diodes |