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1N60 - KD

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1N60 SMALL SIGNAL SCHOTTKY DIODE

1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward character.

Features


● Metal-on-silicon junction, majority carrier conduction
● High current capability, Low forward voltage drop
● Extremely low reverse current Ir
● Ultra speed switching characteristics
● Small temperature coefficient of forward characteristics
● Satisfactory Wave detection efficiency
● For use in RECORDER TV RADIO TELEPHONE as detectors, super high speed switching c rcuits, small current rectifier MECHANICAL DATA Case: DO-35 glass case Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.13 grams Φ 1.8 ± 0.2 Φ 0.5 ± 0.1 DO-35 All Dimensions in mm 26 ± 1 3.8 ± 0.2 2.

The same part from a different manufacturer

Datasheet 1N60 - UTC 1N60

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low g.

Datasheet 1N60 - DEC 1N60

1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltag.

Datasheet 1N60 - MCC 1N60

MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#.

Datasheet 1N60 - TAITRON 1N60

Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forwa.

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