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R SEMICONDUCTOR 1N5921 THRU 1N5956 1.5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation of 1.5W is ideally suited for stabilized power supply, etc. High temperature soldering guaranteed:260°C/10 seconds at terminals MECHANICAL DATA DO-41 JF 0.110(2.8) 0.080(2.0) DIA 1.0(25.4) MIN 0.205(5.20).
Low leakage, low zener impedance at low current Maximum power dissipation of 1.5W is ideally suited for stabilized power supply, etc. High temperature soldering guaranteed:260°C/10 seconds at terminals MECHANICAL DATA DO-41 JF 0.110(2.8) 0.080(2.0) DIA 1.0(25.4) MIN 0.205(5.20) 0.161(4.10) Case: DO-41 molded plastic,R-1 and SMA package are upon request Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end 0.034(0.90) 0.028(0.70) DIA 1.0(25.4) MIN Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA.
1N5931 - EIC
www.eicsemi.com 1N5913 - 1N5956 VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 240 Volts.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5930 |
JINAN JINGHENG |
1.5W SILICON PLANAR ZENER DIODES |
|
| 2 | 1N5930 |
EIC |
SILICON ZENER DIODES |
|
| 3 | 1N5930A |
Digitron Semiconductors |
1.5 WATT ZENER DIODES |
|
| 4 | 1N5930A |
EIC discrete Semiconductors |
SILICON ZENER DIODES |
|
| 5 | 1N5930A |
Sunmate |
AXIAL LEADED SILICON ZENER DIODES |
|
| 6 | 1N5930A |
LGE |
Zener Diodes |
|
| 7 | 1N5930B |
WON-TOP ELECTRONICS |
1.5W ZENER DIODE |
|
| 8 | 1N5930B |
RFE |
ZENER DIODE |
|
| 9 | 1N5930B |
Motorola |
Zener Voltage Regulator Diodes |
|
| 10 | 1N5930B |
Micro Commercial Components |
1.5 Watt Zener Diode |
|
| 11 | 1N5930B |
Pan Jit International Inc. |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
|
| 12 | 1N5930B |
EIC |
SILICON ZENER DIODES |
|