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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ) 125.0 V 135.0 V empty A 6.0 A empty A 125.0.
PURPOSE .
1N5810 - Digitron Semiconductors
1N5807-1N5811 High-reliability discrete products and engineering services since 1977 HIGH EFFICIENCY RECTIFIERS FEATU.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5810-M |
DSI |
DIODE |
|
| 2 | 1N5811 |
Solid State |
RECTIFIERS |
|
| 3 | 1N5811 |
Microsemi |
VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS |
|
| 4 | 1N5811 |
Semtech |
SUPERFAST RECTIFIER DIOSE |
|
| 5 | 1N5811 |
MA-COM |
Rectifier Diode |
|
| 6 | 1N5811 |
EIC |
ULTRAFAST RECOVERY RECTIFIER DIODES |
|
| 7 | 1N5811 |
Digitron Semiconductors |
HIGH EFFICIENCY RECTIFIERS |
|
| 8 | 1N5811 |
Gulf Semiconductor |
SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER |
|
| 9 | 1N5811-M |
DSI |
DIODE |
|
| 10 | 1N5811C |
Micross |
Superfast Rectifier Diode |
|
| 11 | 1N5811D3 |
TT |
ULTRA FAST RECOVERY POWER RECTIFIER |
|
| 12 | 1N5811U |
ST Microelectronics |
Aerospace 6 A fast recovery rectifier |
|
