This voidless hermetically sealed ultrafast recovery rectifier diode series is military qualified per MIL-PRF-19500/477 and is targeted for space, commercial and military aircraft, military vehicles, shipboard markets and all high reliability applications. FEATURES / BENEFITS: Hermetic, non-cavity glass package Category I Metallurgically bonded All d.
/ BENEFITS: Hermetic, non-cavity glass package Category I Metallurgically bonded All devices are 100% hot solder dipped JAN/ JANTX/JANTXV available per MIL-PRF-19500/477 MAXIMUM RATINGS Operating and Storage Temperature: -65oC to +175oC Thermal Resistance: 36 oC (junction to lead) Thermal Resistance: 13 oC (junction to endcap) Forward surge current: 35A @ 8.3 ms half-sine ELECTRICAL CHARACTERISTICS TYPE NUMBER 1N5802/US 1N5804/US 1N5806/US WOR.
Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US.
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/477 and is ideal fo.
These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477 and are ideal for high reliabili.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5804 |
DSI |
DIODE | |
2 | 1N5804 |
Microsemi |
VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | |
3 | 1N5804 |
Semtech |
RECTIFIER DIODE | |
4 | 1N5804 |
EIC |
GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS | |
5 | 1N5804 |
MA-COM |
Rectifier Diode | |
6 | 1N5804 |
Digitron Semiconductors |
HIGH EFFICIENCY RECTIFIERS | |
7 | 1N5804 |
Seme LAB |
GLASS PASSIVATED JUNCTION ULTRA FAST RECOVERY RECTIFIER DIODES | |
8 | 1N5804 |
Solid State |
RECTIFIERS | |
9 | 1N5804 |
Sensitron |
Ultrafast Recovery Rectifiers | |
10 | 1N5802 |
Microsemi |
VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | |
11 | 1N5802 |
Semtech |
RECTIFIER DIODE | |
12 | 1N5802 |
EIC |
GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS |