Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
1N5711CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 0.31 rad. (0.012) A = 1.02 .
mb = 25°C Tamb = 25°C Tamb = 25°C Tamb = 25°C f = 1MHZ Tamb = 25°C IF = 5mA VR = 50V IF = 1mA IF = 15mA IR = 10mA VR = 0V
Min.
Typ.
Max.
0.2 0.41 1
Unit
m
A
V V
70 2 100
PF ps
* Pulse test £ 300ms , d £ 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected]
Prelim. 11/98
.
1N5711CSM - TT
SCHOTTKY BARRIER DIODE 1N5711CSM • High Breakdown Voltage (VBR = 70V) • Low Forward Voltage • Hermetic Ceramic Surface M.
1N5711CSM - TT
SCHOTTKY BARRIER DIODE 1N5711CSM • High Breakdown Voltage (VBR = 70V) • Low Forward Voltage • Hermetic Ceramic Surface M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5711 |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE |
|
| 2 | 1N5711 |
Compensated Deuices Incorporated |
SCHOTTKY BARRIER DIODES |
|
| 3 | 1N5711 |
Diodes Incorporated |
SCHOTTKY BARRIER SWITCHING DIODE |
|
| 4 | 1N5711 |
Micro Commercial Components |
Schottky Barrier Switching Diode |
|
| 5 | 1N5711 |
Microsemi Corporation |
SCHOTTKY BARRIER DIODES |
|
| 6 | 1N5711 |
Avago |
Schottky Barrier Diodes |
|
| 7 | 1N5711 |
Digitron Semiconductors |
SCHOTTKY RECTIFIERS |
|
| 8 | 1N5711 |
M-Pulse Microwave |
General Purpose Schottky Diodes |
|
| 9 | 1N5711 |
Agilent |
Schottky Barrier Diodes |
|
| 10 | 1N5711 |
EIC |
SCHOTTKY BARRIER DIODES |
|
| 11 | 1N5711 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |
|
| 12 | 1N5711 |
Vishay |
Schottky Diodes |
|