Features * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- 0.075 --- 1.90 Mechanical Data * Case: Hermet.
* Low Zener noise specified
* Low Zener impedance
* Low leakage current
* Hermetically sealed glass package
1N5518 THRU 1N5546
0.4W Low Voltage Avalanche Diodes
ABA
C D Cathode Mark
DO-35
INCHES
MM
DIM
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
B
--- 0.154 ---
3.90
C
--- 0.020 ---
0.50
D
--- 0.075 ---
1.90
Mechanical Data
* Case: Hermetically sealed glass case, DO-35.
* Lead Material: Tinned copper clad steel.
* Marking: Body painted, alphanumeric.
* Polarity: Banded end is cathode.
* Thermal Resistance: 200℃/W(Typical) junction to lead at 0.375-inches from body. Metallurgic ally .
1N5518 thru 1N5546 Low Noise Zener Diode Series Features Designed For Use @ Low Current Low Leakage Current Low I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5540 |
Knox Semiconductor Inc |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE | |
2 | 1N5540 |
JGD |
0.4W Low Voltage Avalanche Diodes | |
3 | 1N5540 |
MA-COM |
Low Noise Zener Diode | |
4 | 1N5540A |
New Jersey Semi-Conductor |
(1N5518A - 1N5546A) ZENER DIODES | |
5 | 1N5540A |
Motorola |
LOW VOLTAGE AVALANCHE ZENER DIODES | |
6 | 1N5540B |
Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS | |
7 | 1N5540B |
Microsemi |
500mW Zener Diodes | |
8 | 1N5540B |
Central Semiconductor |
SILICON ZENER DIODES | |
9 | 1N5540B-1 |
Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS | |
10 | 1N5540B-1 |
MA-COM |
Low Noise Zener Diode | |
11 | 1N5540B-1 |
Microsemi |
500mW Zener Diodes | |
12 | 1N5540B-1 |
Aeroflex |
Low Noise Zener Diode |