LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1N5518 - 1N5546 NOMINAL TEST MAX ZENER MAX REVERSE LEAKAGE MAX NOISE MAX REGULATION MAX . PART ZENER CURRENT IMPEDANCE CURRENT DENSITY AT FACTOR REGULATOR NUMBER VOLTAGE (NOTE 2) (NOTE 3) (NOTE 4) CURRENT (NOTE 1) Vz @ Izt Izt Zzt @ Izt Ir Vr1 Vr2 Iz = 250 µA ∆ Vz IzL Izm (VOLTS) (mA.
01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.9 0.9 0.9 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 5.0 6.2 6.8 7.5 8.2 9.1 9.9 10.8 11.7 12.6 13.5 14.4 15.3 16.2 17.1 18.0 19.8 21.6 22.4 25.2 27.0 29.7 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 2.0 4.0 4.0 4.0 5.0 10.0 15.0 20.0 20.0 20.0 20.0 20.0 20.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0.90 0.90 0.85 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2.0 2.0 2..
1N5518 thru 1N5546 Low Noise Zener Diode Series Features Designed For Use @ Low Current Low Leakage Current Low I.
Features * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5520A |
New Jersey Semi-Conductor |
(1N5518A - 1N5546A) ZENER DIODES | |
2 | 1N5520A |
Motorola |
LOW VOLTAGE AVALANCHE ZENER DIODES | |
3 | 1N5520B |
Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS | |
4 | 1N5520B |
Microsemi |
500mW Zener Diodes | |
5 | 1N5520B |
Central Semiconductor |
SILICON ZENER DIODES | |
6 | 1N5520B-1 |
VPT |
Low Noise Zener Diode | |
7 | 1N5520B-1 |
Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS | |
8 | 1N5520B-1 |
Microsemi |
500mW Zener Diodes | |
9 | 1N5520B-1 |
Aeroflex |
Low Noise Zener Diode | |
10 | 1N5520BUR-1 |
Microsemi |
Low Voltage Avalanche 500mW Zener Diodes | |
11 | 1N5520BUR-1 |
VPT |
Zener Diode | |
12 | 1N5521 |
JGD |
0.4W Low Voltage Avalanche Diodes |