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• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ .
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1N5196 - Compensated Deuices Incorporated
• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5190 |
Central Semiconductor |
GLASS PASSIVATED SILICON RECTIFIER |
|
| 2 | 1N5190 |
Microsemi |
FAST RECOVERY GLASS RECTIFIERS |
|
| 3 | 1N5190 |
SENSITRON SEMICONDUCTOR |
FAST RECOVERY RECTIFIERS |
|
| 4 | 1N5190 |
Digitron Semiconductors |
FAST RECOVERY RECTIFIERS DIODES |
|
| 5 | 1N5194 |
Microsemi |
SWITCHING DIODE |
|
| 6 | 1N5194 |
Compensated Deuices Incorporated |
GENERAL PURPOSE SILICON DIODES |
|
| 7 | 1N5194UR |
Compensated Deuices Incorporated |
GENERAL PURPOSE SILICON DIODES |
|
| 8 | 1N5194UR |
Microsemi Corporation |
LL-35 High Voltage / Current Low Leakage Glass Diodes |
|
| 9 | 1N5195 |
Microsemi |
SWITCHING DIODE |
|
| 10 | 1N5195 |
Compensated Deuices Incorporated |
GENERAL PURPOSE SILICON DIODES |
|
| 11 | 1N5195UR |
Microsemi Corporation |
LL-35 High Voltage / Current Low Leakage Glass Diodes |
|
| 12 | 1N5195UR |
Compensated Deuices Incorporated |
GENERAL PURPOSE SILICON DIODES |
|