The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50A is generally applied in high efficien.
* RDS(ON) < 8.0Ω @ VGS=10V, ID=0.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50AL-TM3-T
1N50AG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-251
Pin Assignment 123 GDS
1N50AL-TM3-T
(1)Packing Type
(1) T: Tubel
(2)Package Type
(2) TM3: TO-251
Packing Tube
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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QW-R205-030.a
1N50A
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 1N50-CB |
UTC |
N-CHANNEL POWER MOSFET | |
3 | 1N50-KW |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | 1N5000 |
Microsemi Corporation |
Silicon Rectifiers | |
5 | 1N5001 |
Microsemi Corporation |
Silicon Rectifiers | |
6 | 1N5002 |
Microsemi Corporation |
Silicon Rectifiers | |
7 | 1N5003 |
Microsemi Corporation |
Silicon Rectifiers | |
8 | 1N5008A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE | |
9 | 1N5009A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE | |
10 | 1N501 |
BKC |
GOLD BONDED DIODES | |
11 | 1N5010A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE | |
12 | 1N5011A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE |