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1N5059GP THRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts D * DO-204AC 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free j.
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA ♦ High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length at 5 lbs., (2.3kg) tension
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0.300 (7.6) 0.230 (5.8)
0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
*Glass -plastic encapsulation tech.
1N5061GP - Vishay
www.vishay.com 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP Vishay General Semiconductor Glass Passivated Junction Plastic R.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5061 |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER |
|
| 2 | 1N5061 |
NXP |
Controlled avalanche rectifiers |
|
| 3 | 1N5061 |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 4 | 1N5061 |
Vishay |
Standard Avalanche Sinterglass Diode |
|
| 5 | 1N5061 |
LGE |
Plastic Silicon Rectifier |
|
| 6 | 1N5061 |
Central Semiconductor |
GLASS PASSIVATED SILICON RECTIFIERS |
|
| 7 | 1N5061 |
Digitron Semiconductors |
STANDARD AVALANCHE DIODE |
|
| 8 | 1N5061 |
NTE |
General Purpose Silicon Rectifier |
|
| 9 | 1N5060 |
NTE |
General Purpose Silicon Rectifier |
|
| 10 | 1N5060 |
NXP |
Controlled avalanche rectifiers |
|
| 11 | 1N5060 |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER |
|
| 12 | 1N5060 |
Diotec Semiconductor |
Silicon Rectifiers |
|