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1N4531, 1N4532 Silicon Epitaxial Planar Switching Diode Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature Range .
V 1N4531 IR 1N4532 IR 1N4531 IR 1N4532 IR 25 nA 100 nA 50 µA 100 µA 1N4531 Cd 4 pF 1N4532 Cd 2 pF 1N4531 trr 4 ns 1N4532 trr 2 ns 1N4532 trr 4 ns SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 .
1N4532 - Microsemi
1N4532 FEATURES • 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 • SWITCHING DIODE • METALLURGICALLY .
1N4532 - NXP
1N4531; 1N4532 The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in.
1N4532 - EIC
1N4531 ~ 1N4532 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N4530 |
Edal Industries |
(1N4525 - 1N4530) RECTIFIER DIODE |
|
| 2 | 1N4531 |
SEMTECH |
SILICON EPITAXIAL PLANAR DIODES |
|
| 3 | 1N4531 |
EIC |
HIGH SPEED SWITCHING DIODES |
|
| 4 | 1N4531 |
NTE |
Small Signal Diode |
|
| 5 | 1N4531 |
MA-COM |
Silicon Switching Diode |
|
| 6 | 1N4531 |
Microsemi |
SWITCHING DIODE |
|
| 7 | 1N4531 |
NXP |
High-speed diodes |
|
| 8 | 1N4534 |
Microsemi |
SWITCHING DIODE |
|
| 9 | 1N4500 |
Microsemi |
SWITCHING DIODE |
|
| 10 | 1N4506 |
Solid State |
POWER RECTIFIER |
|
| 11 | 1N4507 |
Solid State |
POWER RECTIFIER |
|
| 12 | 1N4508 |
Solid State |
POWER RECTIFIER |
|