SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • Low Leakage • Fast Switching • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for general purpose, switching applications. • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VBR Breakdown Voltage 100V V.
elab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 8271 Website: http://www.semelab-tt.com Issue 2 Page 1 of 4 SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B THERMAL PROPERTIES Symbol RθJA Parameter Ther.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N4148D2B |
TT |
SILICON EPITAXIAL PLANAR DIODE | |
2 | 1N4148 |
ON Semiconductor |
Small Signal Diode | |
3 | 1N4148 |
Fairchild Semiconductor |
Small Signal Diode | |
4 | 1N4148 |
Vishay |
Small Signal Fast Switching Diodes | |
5 | 1N4148 |
PAN JIT |
SWITCHING DIODES | |
6 | 1N4148 |
Rectron |
FAST SWITCHING DIODE | |
7 | 1N4148 |
UTC |
HIGH-SPEED SWITCHING DIODE | |
8 | 1N4148 |
DIODES |
FAST SWITCHING DIODE | |
9 | 1N4148 |
Renesas |
Silicon Epitaxial Planar Diode | |
10 | 1N4148 |
NXP |
High-speed diodes | |
11 | 1N4148 |
Taiwan Semiconductor |
High Speed Switching Diode | |
12 | 1N4148-1 |
MA-COM |
Silicon Switching Diode |