1N2165 - Motorola

1N2165 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. • Low Dynamic Impedance • Choice of Three Temperatur.

Features

Impedance versus temperature characteristics of the junctions involved, optimum temperature stability is obtained by operating in the zener current range at which the temperature coefficient is a minimum. MAXIMUM RATINGS Junction Temperature: -56 to +200oC . Storage Temperature: -66 to +2000 c DC Power Dissipation: 750 mW @ TA =25°C MECHANICAL CHARACTERISTICS CASE: Hermetically sealed. welded metal glass DIMENSIONS: Sao Outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable and weldable. POLARITY: Cathode to case WEIGHT: 1.5 Grams (approx) MOUN.