Naina Semiconductor Ltd. 1N2133A thru 1N2138AR Standard Recovery Diode, 60A Features • Glass passivated die • Low forward voltage drop • High surge capability • Low leakage current • Normal and Reverse polarity • Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N2133A.
• Glass passivated die
• Low forward voltage drop
• High surge capability
• Low leakage current
• Normal and Reverse polarity
• Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N2133A(R)
Repetitive peak reverse voltage
VRRM
300
RMS reverse voltage
VRMS
210
DC blocking voltage
VDC 50
Continuous forward current
TC ≤ 150oC
IF(AV)
60
Surge non-repetitive forward current, half-sine wave
TC = 25oC
IFSM 1050
Maximum peak forward voltage
IF = 60A, TJ = 25oC
VF
1.1
Reverse current
TJ = 25oC
1.
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N2137A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
2 | 1N2137A |
America Semiconductor |
Silicon Standard Recovery Diode | |
3 | 1N2137A |
Naina Semiconductor |
Standard Recovery Diode | |
4 | 1N213 |
International Semiconductor |
(1N200 - 1N222) General Purpose Diodes | |
5 | 1N2130A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
6 | 1N2130A |
America Semiconductor |
Silicon Standard Recovery Diode | |
7 | 1N2130A |
Naina Semiconductor |
Standard Recovery Diode | |
8 | 1N2130AR |
America Semiconductor |
Silicon Standard Recovery Diode | |
9 | 1N2130AR |
Naina Semiconductor |
Standard Recovery Diode | |
10 | 1N2131A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
11 | 1N2131A |
America Semiconductor |
Silicon Standard Recovery Diode | |
12 | 1N2131A |
Naina Semiconductor |
Standard Recovery Diode |