Naina Semiconductor Ltd. 1N2128A thru 1N2131AR Standard Recovery Diode, 60A Features Glass passivated die Low forward voltage drop High surge capability Low leakage current Normal and Reverse polarity Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N2128A.
Glass passivated die
Low forward voltage drop
High surge capability
Low leakage current
Normal and Reverse polarity
Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N2128A(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
VDC 50
Continuous forward current
TC ≤ 150oC
IF(AV)
60
Surge non-repetitive forward current, half-sine wave
TC = 25oC
IFSM 1050
Maximum peak forward voltage
IF = 60A, TJ = 25oC
VF
1.1
Reverse current
TJ = 25oC TJ =.
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N2131A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
2 | 1N2131A |
America Semiconductor |
Silicon Standard Recovery Diode | |
3 | 1N2131A |
Naina Semiconductor |
Standard Recovery Diode | |
4 | 1N213 |
International Semiconductor |
(1N200 - 1N222) General Purpose Diodes | |
5 | 1N2130A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
6 | 1N2130A |
America Semiconductor |
Silicon Standard Recovery Diode | |
7 | 1N2130A |
Naina Semiconductor |
Standard Recovery Diode | |
8 | 1N2130AR |
America Semiconductor |
Silicon Standard Recovery Diode | |
9 | 1N2130AR |
Naina Semiconductor |
Standard Recovery Diode | |
10 | 1N2133A |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes | |
11 | 1N2133A |
America Semiconductor |
Silicon Standard Recovery Diode | |
12 | 1N2133A |
Naina Semiconductor |
Standard Recovery Diode |