R SEMICONDUCTOR 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capabil.
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters,free wheeling ,and polarity protection applications High temperature soldering guaranteed:260 C/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: R-1 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Polarity: color ba.
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts C.
1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere R-1 0.102 (2.6).
BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIERS 1N17---1N19 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES Metal-.
1N17 ~ 1N19 SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 40 Volts Forward current – 1.0 Amperes Features R-1 • .
1N17-1N19 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features Metal-Semiconductor junction w.
MCC Features • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N100 |
BKC |
Gold Bonded Diode | |
2 | 1N100A |
BKC |
Gold Bonded Diode | |
3 | 1N102 |
BKC |
Gold Bonded Diode | |
4 | 1N103 |
BKC |
Gold Bonded Diode | |
5 | 1N104 |
BKC |
Gold Bonded Diode | |
6 | 1N1064 |
Microsemi Corporation |
SILICON POWER RECTIFIER | |
7 | 1N1064 |
Solid State |
SILICON POWER RECTIFIER | |
8 | 1N1065 |
Microsemi Corporation |
SILICON POWER RECTIFIER | |
9 | 1N1065 |
Solid State |
SILICON POWER RECTIFIER | |
10 | 1N1066 |
Microsemi Corporation |
SILICON POWER RECTIFIER | |
11 | 1N1066 |
Solid State |
SILICON POWER RECTIFIER | |
12 | 1N1067 |
Microsemi Corporation |
SILICON POWER RECTIFIER |