1N1122A - GeneSiC

1N1122A Silicon Standard Recovery Diode

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Sym.

Features

• High Surge Capability
• Types from 50 V to 600 V VRRM
• Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 12 12 12 Surge non-repetitive forward c.