1803DFH - ST Microelectronics

1803DFH ST1803DFH

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. TO-220FH INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-E.

Features

Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST1803DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.125 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO www.DataSheet4U.com Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation V.