17N80C2 - Infineon Technologies

17N80C2 SPP17N80C2

www.DataSheet4U.com Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO263-3-2 Prod.

Features

epetitive tAR limited by Tjmax Reverse diode dv/dt IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature w w w ta a D .2000-05-29 e h S 4 et U o .c m www.DataSheet4U.com Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Symbol min. SPP17N80C2 SPB17N80C2 Values typ. 35 max. 0.6 62 62 - Unit Rth.