15GN03MA - ON Semiconductor

15GN03MA RF Transistor

DATA SHEET www.onsemi.com RF Transistor 10 V, 70 mA, fT = 1.5 GHz, NPN Single MCP 15GN03MA Features • High Cut−off Frequency: fT = 1.5 GHz Typ • High Gain: ⎪S21e⎪2 = 13 dB Typ (f = 1 GHz) • Ultrasmall Package Permitting Applied Sets to be Small and Slim • This is a Pb−Free Device Applications • VHF, RF, MIXER, OSC, IF Amplifier Specifications ABSOLUTE M.

Features

• High Cut−off Frequency: fT = 1.5 GHz Typ
• High Gain: ⎪S21e⎪2 = 13 dB Typ (f = 1 GHz)
• Ultrasmall Package Permitting Applied Sets to be Small and Slim
• This is a Pb−Free Device Applications
• VHF, RF, MIXER, OSC, IF Amplifier Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Parameter Conditions Value Unit VCBO Collector−to−Base Voltage 20 V VCEO Collector−to−Emitter Voltage 10 V VEBO Emitter−to−Base Voltage 3 V IC Collector Current 70 mA PC Collector Dissipation When mounted on 400 mW ceramic substrate (250 mm2 x 0.8 mm) Tj Junction Temperature 150 °C T.