150U/150UR SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec M.
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 150A 1.4V 3000A 750A 45,000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj Tstg
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Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperatur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 150UR10 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
2 | 150UR100 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
3 | 150UR100D |
International Rectifier |
(150UR Series) STANDARD RECOVERY DIODES | |
4 | 150UR120 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
5 | 150UR120D |
International Rectifier |
STANDARD RECOVERY DIODES | |
6 | 150UR140 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
7 | 150UR160 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
8 | 150UR20 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
9 | 150UR60 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
10 | 150UR60D |
International Rectifier |
(150UR Series) STANDARD RECOVERY DIODES | |
11 | 150UR80 |
NAINA SEMICONDUCTOR |
SILICON POWER DIODE | |
12 | 150UR80D |
International Rectifier |
(150UR Series) STANDARD RECOVERY DIODES |